Indexed by:
Journal Papers
First Author:
Ma, Hangfan
Correspondence Author:
Li, XY (reprint author), Dalian Univ Technol, State Key Lab Fine Chem, Sch Environm Sci & Technol, Dalian 116024, Peoples R China.; Li, XY (reprint author), Dalian Univ Technol, Key Lab Ind Ecol & Environm Engn, Sch Environm Sci & Technol, Dalian 116024, Peoples R China.
Co-author:
Li, Xinyong,Fan, Shiying,Yin, Zhifan,Gan, Guoqiang,Qin, Meichun,Wang, Penglei,Li, Yaxuan,Wang, Lianzhou
Date of Publication:
2020-05-26
Journal:
ACS APPLIED ENERGY MATERIALS
Included Journals:
SCIE
Document Type:
J
Volume:
3
Issue:
5
Page Number:
5083-5094
ISSN No.:
2574-0962
Key Words:
CO2 reduction; direct Z-scheme; oriented charge transfer; interfacial
defect; DFT calculation
Abstract:
Constructing efficient photocatalysts for CO2 conversion and synthesis of valuable chemical fuels has been one of the most promising strategies and challenge for both energy crisis and greenhouse gas control. In this study, an interfacial defect in the Cobased spinel/carbon nitride direct Z-scheme heterojunction (Co3O4/CNS) with ultrahigh charge transfer efficiency was successfully constructed by in situ electrostatic assembly between g-C3N4 nanosheets and a hollow spherical Co3O4. Compared to pure g-C3N4 nanosheets, the constructed heterojunction Co3O4/CNS-10% shows a highly advanced photocatalytic capability with approximately 11.5 and 6.4 times in the CO evolution rate (13.31 mu mol.g(-1).h(-1)) and CH4 generation rate (3.17 mu mol.g(-1).h(-1)), respectively. Additionally, both experimental observations and density functional theory calculations reveal that the oxygen vacancies could form spontaneously in the interface, which play a great role in not only driving oriented interface charge transfer through acting as interface charge recombination centers but also improving CO2 molecule adsorption and activation in a sense. This work would not only provides deep insights into the heterojunction construction for highly photocatalytic performance promotion but also emphasizes the importance of interfacial defect engineering in effectively controllable interface charge transfer.
Translation or Not:
no
