Indexed by:
期刊论文
First Author:
Zhu, Huichao
Correspondence Author:
Zhu, HC (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Qianjin St 2699, Changchun 130012, Peoples R China.
Co-author:
Chang, Yuchun,Du, Guotong,Li, Xiangping,Zhang, Yuantao,Cui, Yongguo,Huang, Keke,Xia, Xiaochuan,Yang, Tianpeng,Zhang, Baolin
Date of Publication:
2006-08-01
Journal:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Included Journals:
SCIE、EI、Scopus
Document Type:
J
Volume:
21
Issue:
8
Page Number:
1090-1093
ISSN No.:
0268-1242
Abstract:
ZnO:P/n(+)-Si heterostructures were fabricated on n(+)-Si substrates by metalorganic chemical vapour deposition. The substrates were heavily doped with phosphorus. The crystallinity and optical properties of ZnO films were characterized by photoluminescence spectra and x-ray diffraction, respectively. X-ray photoelectron spectroscopy (XPS) showed that phosphorus atoms existed in ZnO films. The current-voltage (I-V) curve showed current rectification characteristic behaviour.
Translation or Not:
no
