Highly transparent nickel and iron sulfide on nitrogen-doped carbon films as counter electrodes for bifacial quantum dot sensitized solar cells
发表时间：2019-11-04
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- 论文类型：
- 期刊论文
- 第一作者：
- Ou, Jinhua
- 通讯作者：
- Liu, JX (reprint author), Dalian Univ Technol, State Key Lab Fine Chem, Dalian 116024, Peoples R China.; Xiang, J (reprint author), Cent S Univ, Dept Chem & Chem Engn, Changsha 410083, Hunan, Peoples R China.
- 合写作者：
- Liang, Jing,Xiang, Juan,Sun, Licheng,Liu, Jinxuan
- 发表时间：
- 2019-11-15
- 发表刊物：
- SOLAR ENERGY
- 收录刊物：
- EI、SCIE
- 文献类型：
- J
- 卷号：
- 193
- 页面范围：
- 766-773
- ISSN号：
- 0038-092X
- 关键字：
- Metal sulfide; Nitrogen doped C film; Quantum dot-sensitized solar cells; Counter electrode
- 摘要：
- Semiconductors are widely used as counter electrodes in quantum dot-sensitized solar cells. However, many counter electrode materials have poor conductivity and require tedious post-treatment procedures. Here, our groups develop a highly transparent MS2@N-doped C film materials (M = Ni, Fe) derived from layer-by-layer self-assembly of a M-TCPP film as a counter electrode in bifacial CdS/CdSe quantum dot-sensitized solar cells. Devices based on the MS2@N-doped C films exhibited higher respective front- and reverse-side power conversion efficiencies (i.e., 4.57% and 3.98% for the NiS2@N-doped C film and 3.18% and 2.63% for the FeS2@N-doped C film) than those of Pt-based devices (2.39% and 1.74%). We attribute the outstanding catalytic activity and excellent stability of the MS2@N-doped C film materials to the homogeneous sulfides within the transparent nitrogen-doped C film, as confirmed by electrochemical analyses, including cycle voltammetry, impedance spectroscopy and Tafel-polarization measurements.
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- 否
