Optical and electronic properties of ZnO : P/n(+)-Si heterostructures fabricated by metalorganic chemical vapour deposition
发布时间：2019-10-09
点击次数：
- 论文类型：
- 期刊论文
- 发表时间：
- 2006-08-01
- 发表刊物：
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- 收录刊物：
- Scopus、EI、SCIE
- 文献类型：
- J
- 卷号：
- 21
- 期号：
- 8
- 页面范围：
- 1090-1093
- ISSN号：
- 0268-1242
- 摘要：
- ZnO:P/n(+)-Si heterostructures were fabricated on n(+)-Si substrates by metalorganic chemical vapour deposition. The substrates were heavily doped with phosphorus. The crystallinity and optical properties of ZnO films were characterized by photoluminescence spectra and x-ray diffraction, respectively. X-ray photoelectron spectroscopy (XPS) showed that phosphorus atoms existed in ZnO films. The current-voltage (I-V) curve showed current rectification characteristic behaviour.
- 第一作者
- Zhu, Huichao
- 合写作者
- Zhang, Baolin,Xia, Xiaochuan,Yang, Tianpeng,Cui, Yongguo,Huang, Keke,Li, Xiangping,Zhang, Yuantao,Chang, Yuchun,Du, Guotong
- 通讯作者
- Zhu, HC (reprint author), Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Qianjin St 2699, Changchun 130012, Peoples R China.